Monte Carlo Simulation Using JMP Profiler to Evaluate Silicon Process (2025-US-PO-2546)

Slow, fast, and typical process corners of semiconductor devices can be determined with just a number, such as Z-scores (Sigma from process target). This method ensures confirmation of target process corners and quick delivery of the dies to validate their functionality internally within NXP Semiconductors. 

Process monitor ring oscillators (PMRO) are a set of 18 ring oscillators on each die. PMRO time delay results were correlated back to wafer acceptance Test (WAT) structures, using a JMP scatter plot. The most correlating parameters were used to build the model. Production variation data of a previous device from the same technology was used as the predictor variable. The Simulator tool in the JMP Prediction Profiler was used for Monte Carlo simulation to predict the lifetime variation of the rings. Model mean/standard deviation and individual die PMRO data was used to calculate the Z-score for each die.

The PMRO model was also used to simulate current (IDD) data, which, in turn, helped to predict the max power of the device in production, as well as setting the upper IDD limit in the ATE test program.