High-density IC packages with fine features (3 µm) and larger areas (77 µm) rely on maintaining 100% throwing power during copper (Cu) deposition for optimal performance. This study examines how aspect ratio, brightener concentration, and current density affect Cu deposition throwing power. Using JMP, experimental data were analyzed to determine optimal conditions. Results show maximum throwing power at lower aspect ratios, higher current densities (2 ASD), and a 0.7 ml/l brightener concentration. Predictive modeling suggests 97% throwing power can be achieved with 1 ml/l brightener, 2 ASD current density, and a 5:1 aspect ratio. The study emphasizes the importance of data analysis in optimizing Cu deposition for advanced IC packages.